See Product Specifications
Product overview
- Part Number
- GS66506T-E01-MR
- Quantity Available
- 1,847
- Manufacturer
- GaN Systems
- Product Category
- MOSFET
- Description
- MOSFET 650V, 22A, GaN E-HEMT, GaNPX package, Top-side cooled
Documents & Media
- Datasheets
- GS66506T-E01-MR
Product Attributes
- Id-连续漏极电流 :
- 22.5 A
- Qg-栅极电荷 :
- 4.4 nC
- Rds On-漏源导通电阻 :
- 67 mOhms
- Vds-漏源极击穿电压 :
- 650 V
- Vgs - 栅极-源极电压 :
- 7 V
- Vgs th-栅源极阈值电压 :
- 1.3 V
- 安装风格 :
- SMD/SMT
- 封装 :
- Cut Tape, MouseReel, Reel
- 封装 / 箱体 :
- GaNPX-4
- 技术 :
- GaN
- 晶体管极性 :
- N-Channel
- 最大工作温度 :
- + 150 C
- 最小工作温度 :
- - 55 C
- 通道数量 :
- 1 Channel
- 通道模式 :
- Enhancement
- 配置 :
- Single
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