See Product Specifications
Product overview
- Part Number
- BDS20-QR-B
- Quantity Available
- 0
- Manufacturer
- Welwyn Components / TT Electronics
- Product Category
- Bipolar Transistor-Bipolar Junction Transistor (BJT)
- Description
- 双极晶体管 - 双极结型晶体管(BJT) BIPOLAR POWER TRANSISTOR
Documents & Media
- Datasheets
- BDS20-QR-B
Product Attributes
- Pd-功率耗散 :
- 35 W
- 发射极 - 基极电压 VEBO :
- 5 V
- 增益带宽产品fT :
- 8 MHz
- 安装风格 :
- Through Hole
- 封装 / 箱体 :
- TO220M-3
- 晶体管极性 :
- NPN
- 最大工作温度 :
- + 200 C
- 最小工作温度 :
- - 65 C
- 配置 :
- Single
- 集电极—发射极最大电压 VCEO :
- 80 V
- 集电极—基极电压 VCBO :
- 80 V
- 集电极—射极饱和电压 :
- 4 V
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